A novel method has been developed for preparing in situ straining samples for transmission electron microscopy (TEM) to study dislocation behaviour, here transmission through phase interfaces. A dual-beam focussed ion beam microscope was used to extract oriented foils from locations with specific crystallography in a sample area which had been selected using electron backscattered diffraction (EBSD). The foil was attached to a pre-prepared substrate which was then strained in a transmission electron microscope. The method has been demonstrated successfully by studying <c + a> dislocation transmission through α/β interfaces in a commercial Ti–6Al–4V alloy. However, bending of the foil prevented the actual transmission from being further characterized.